1 pertemuan 5 fabrikasi ic cmos matakuliah: h0362/very large scale integrated circuits tahun: 2005...
TRANSCRIPT
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Pertemuan 5
Fabrikasi IC CMOS
Matakuliah : H0362/Very Large Scale Integrated Circuits
Tahun : 2005
Versi : versi/01
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Learning Outcomes
Pada Akhir pertemuan ini, diharapkan mahasiswa akan dapat menyebutkan proses fabrikasiIC CMOS.
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IC Fabrication
Sumber: http://mems.cawru.edu/shortcourse/figure/I_2.1.gif
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Silicon Processing
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Silicon wafer
Sumber: http://www.amd.com
Diameter
Wafer
Die sites
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Material Growth & Deposition
Silicon oxide
Silicon wafer
O2 flow
Silicon wafer
SiO2 layerX
Si
Xox
Growth phase Final structure
Substrate
CVD oxide
SiO2 molecues
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IC Layers
Ion implanterIon source accelerator
Magnetic mass separator
Ion beam
wafer
Ion
Silicon wafer
Silicon nuclei
electron cloud
x0
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Lythography
poly
substrate
poly
substrate
After oxide deposition After CMP
Glass Pattern on underside
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Lythography
Spinning wafer
Photoresist spray
Vcuum chuck
Resist application
Photoresist coating
Coated wafer
Wafer
Flat resist
Edge bead Edge bead
Beading
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Lythography
UV
Reticle
Resist-coatedWafer surface
Reticleshadow
Projection optics(not shown)
Exposure step
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Lythography
Wafer
UV
Reticle
Resist
Exposure pattern
Wafer
After development and rinsing
Hardenedresist layer
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Lythography
Hardenedresist layer
Substrate
Initial patterning of resist
Oxide layer
After etching process
Substrate
Pattern oxide layer
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Lythography
Incoming ion beam
Substrate
Arsenic ions
Doped n-type region
Substrate
n+ n+
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CMOS Process Flow
p-epitaxial layer
p+ substrate
a. Starting wafer with epitaxial layer
n-wellp, Na
b. Creation of n-well in p-epitaxial layer
n-wellp, Na
c. Active area definition using nitride / oxide
p, Nan-well
d. Silicon etch
Nitridep, Na
n-well
e. Field oxide growth
FOX FOX FOX FOX
p, Nan-well
f. Surface preparation
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CMOS Process Flow
a. Gate oxide growth
p, Na
n-well
b. Gate oxide growthPoly gate deposition & patterning
p, Na
n-well
poly
c. pSelect mask and implant
p, Nan-well
resist
Boron implant
p+ implantd. nSelect mask and implant
p, Na
n-well
resist
Arsenic implant
n+ implant
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CMOS Process Flow
a. After anneal and CVD oxide
p, Nan-well
b. After CVD oxide active contact, W plugs
p, Nan-well
W W W W W W c. Metal 1 coating and patterning
p, Nan-well
Metal 1
Metal bonding pad
Bond
Bonding pad
Ke pin IC
Overglasswire
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Design Rules
w
p
w
p
Sp-p
poly
poly
Wp = minimum width of polysilicon line
Sp-p
= minimum poly-topoly
spacing
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RESUME
• IC Fabrication: Flow of process.
• Silicon Processing: wafer, material growth, deposition.
• Lythography: pattern, photoresist coating, exposure steps, etching, n-type.
• CMOS Process flow.
• Design rules