Simulation of p-GaN/ i-InGaN/n-GaN Solar CellPresented By
Khan, Md. Rabiul Islam (15-98279-1) Nazneen, Rifat (15-98878-3) Taher, Md. Iktiham Bin (15-98378-1) Khan, Mohammad Irfan (15-98393-1)
Overview IntroductionProperties Of III- Nitride Materials Properties of InxGa1-xN used in simulationsStructure model and Few parameters for Simulation Results And Discussion Conclusion
In this work, the performances of a solar cell based on InGaN were simulated under the illumination conditions of one sun by employing SILVACO software.
IntroductionEnhancing conversion efficiency from sunlight into electricity is the
main job in the photovoltaic technology of solar cells.This process requires firstly, a material in which the absorption of
light raises an electron to a higher energy state, and secondly, the movement of this higher energy electron from the solar cell into an external circuit.
Our methodology is to make the solar cell absorb as much as possible of the solar spectrum by using material engineering. We tune the band gap of InN indicates that the band gaps of the InxGa1-xN alloys can extend continuously from 0.67 eV (InN, in the near IR) to 3.4 eV (GaN, in the mid-UV) , which cover the most of the solar spectrum.
This opens the possibility of fabricating multi-junction solar cells with high efficiency based solely on the InGaN ternary alloy.
Properties Of III- Nitride Materials What is III- Nitride Material
III – nitrate is a direct band gap semiconductor material. Here, the alloy of InGaN is a mixer of gallium nitride (GaN) and indium nitride (InN). Its bandgap is tuned over the entire range of the solar spectrum from 0.67 eV to 3.4 eV.
Why use III- Nitride material
• It has a higher band gap which can cover the solar
spectrum range (0.67eV to 3.4eV)
• Has long extinction diffusion length
• High carrier mobility
• Provide high efficiency due to the presence of
higher band gap.
• Ability to absorb high photon energy.
• Provide lattice match with other materials.
• High drift velocity
• Has direct and tunable band gap
• Provide high temperature and radiation resistance .
Difference Between III- Nitrate Multi Junction Cell And Other Cells
Properties of InxGa1-xN used in simulations• The unstrained bandgap energy of InxGa1–xN is
expressed by the following formula:
• Electron Affinity:
• Effective density of states in the conduction band
Effective density of states in the valence band:
• Relative permittivity:
• The electron and hole nobilities were calculated as a function of doping using
where i represents either electrons (e) or holes (h), N is the doping concentration and μmin, μmax, γ and Ng are parameters specific to a given semiconductor
)1(43.1)1(4.37.0)( 1 xxxxNGaInE xxg
)1(3.29.0 xxNc
)1(8.13.5 xxN y
)1(4.103.14 xxe
tii
ii lNgNN
),/(1)( min,max,
,min
)4.3(7.01.4 gEX
Structure modelSchematic structure of the solar cells Mesh of the structure
The simulation of electric fields and Internal potential
Electric field across the structure Internal potential across the structure
Concentration of free electrons and free holes
Results And Discussion The Characteristics Of the Solar Cell
At open Circuit point , V=0 And V=Voc Gives
The Efficiency Of The Solar Cell
Another important solar cell parameter is the fill factor (FF)
JSc= 29.95 mA/cm2VOC = 2.55 V n=ideality factorPin=1000Wm2 under 1 sun, AM1.5 condition
scnkTqv
s JeJJ )1( /
)1ln( JsJsc
qnkTVoc
%100in
mm
PJV
ococ
mm
JVJVFF
Results And Discussion (cont.…)I-V characteristic curve of solar cell. Result Of Simulation
Jsc(mA/cm2) VOC(V) FF(%) n(%)
29.95 2.55 89.60 68.54
Results And Discussion (cont.…)
The spectral response at a given wavelength is defined as
• the peak wavelengths of the JSC
spectra were measured at 615 nm with about 4e-10A.
)()(
)(
IJ
SR ph
Why Our Proposed Idea is the Best?
Conclusion In this work, we studied a solar cell based on InGaN by employing SILVACO software, I-V characteristic, band structure, mesh of the structure, band gap, and spectral response… etc., were performed. For a doping equal to 1e19, 1e16 and 1e19 cm-3 respectively for the p-GaN, i-In0.39Ga0.61N and n-GaN layers, we arrive at a short-circuit current and voltage open circuit equal to 29.95 mA/cm2 and 2.55 V respectively.The spectral response of the cell has been simulated using 1-sun AM1.5 illumination. Results show that that the peak wavelengths of the Jsc spectra were measured at 615 nm with about 4e-10A.
